UMW FDN308P(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | FDN308P(UMW) |
| LCSC Part # | C5290361 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 1.5A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 83pF | |
| Current - Continuous Drain(Id) | 1.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 500mW | |
| RDS(on) | 86mΩ@4.5V;120mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 341pF | |
| Gate Charge(Qg) | 3.8nC | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-channel 2.5V specified MOSFET features an enhanced gate version based on Fairchild's advanced PowerTrench process. It is optimized for power management applications with a wide gate drive voltage range (2.5V~12V).
Features
AI Translation
- VDS = -20V
- RDS(ON) < 70mΩ (VGS = -4.5V)
- RDS(ON) < 85mΩ (VGS = -2.5V)
In-Stock: 2,020
2,020 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0463 | $ 0.46 |
| 100+ | $ 0.0368 | $ 3.68 |
| 300+ | $ 0.032 | $ 9.60 |
| 3,000+ | $ 0.0272 | $ 81.60 |
| 6,000+ | $ 0.0244 | $ 146.40 |
| 9,000+ | $ 0.0229 | $ 206.10 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 83pF | |
| Current - Continuous Drain(Id) | 1.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 500mW | |
| RDS(on) | 86mΩ@4.5V;120mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 341pF | |
| Gate Charge(Qg) | 3.8nC | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-channel 2.5V specified MOSFET features an enhanced gate version based on Fairchild's advanced PowerTrench process. It is optimized for power management applications with a wide gate drive voltage range (2.5V~12V).
Features
AI Translation
- VDS = -20V
- RDS(ON) < 70mΩ (VGS = -4.5V)
- RDS(ON) < 85mΩ (VGS = -2.5V)
C5290361 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
