onsemi BSS138
| Manufacturer | |
| MPN | BSS138 |
| LCSC Part # | C52895 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 50V 0.22A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 50V | |
| Current - Continuous Drain(Id) | 220mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 3.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 27pF | |
| Gate Charge(Qg) | 2.4nC@25V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N-Channel enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- 0.22 A, 50 V. RDS(ON) = 3.5 Ω @ VGS = 10 V; RDS(ON) = 6.0 Ω @ VGS = 4.5 V
- High density cell design for extremely low RDS(ON)
- Rugged and Reliable
- Compact industry standard SOT - 23 surface mount package
Applications
- small servo motor control
- power MOSFET gate drivers
- other switching applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.068 | $ 0.68 |
| 100+ | $ 0.0569 | $ 5.69 |
| 300+ | $ 0.0514 | $ 15.42 |
| 3,000+ | $ 0.0312 | $ 93.60 |
| 6,000+ | $ 0.0279 | $ 167.40 |
| 9,000+ | $ 0.0262 | $ 235.80 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 50V | |
| Current - Continuous Drain(Id) | 220mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 3.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 27pF | |
| Gate Charge(Qg) | 2.4nC@25V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N-Channel enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- 0.22 A, 50 V. RDS(ON) = 3.5 Ω @ VGS = 10 V; RDS(ON) = 6.0 Ω @ VGS = 4.5 V
- High density cell design for extremely low RDS(ON)
- Rugged and Reliable
- Compact industry standard SOT - 23 surface mount package
Applications
- small servo motor control
- power MOSFET gate drivers
- other switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



