TI LMG5200MOFT
| Manufacturer | |
| MPN | LMG5200MOFT |
| LCSC Part # | C527479 |
| Packaging | QFN-9(6x8) |
| Customer # | |
| Key Attributes | LMG5200 80-V, 10-A GaN Half-Bridge Power Stage |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Full Half-Bridge (H Bridge) Drivers | |
| Manufacturer | TI | |
| Packaging | QFN-9(6x8) | |
| Driven Configuration | Half-Bridge | |
| Load Type | MOSFET | |
| Current - Output High(IOH) | - | |
| Input Logic Level - High | 1.87V~2.22V | |
| Rise Time | - | |
| Fall Time | - | |
| Propagation Delay tpLH | 29.5ns;29.5ns | |
| Current - Output Low(IOL) | - | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Under Voltage Protection;Dead-time control;Built-in bootstrap diode | |
| Quiescent Current | 80uA | |
| Voltage - Supply | 4.75V~5.25V | |
| Input Logic Level - Low | 1.48V~1.76V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 250 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm× 8 mm × 2 mm lead-free package and can be easily mounted on PCBs. The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring highfrequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5 - 1.5 V).
Features
- Integrated 15-mΩ GaN FETs and Driver
- 80-V Continuous, 100-V Pulsed Voltage Rating
- Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
- Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
- Ideal for Isolated and Non-Isolated Applications
- Gate Driver Capable of Up to 10 MHz Switching
- Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
- Supply Rail Undervoltage Lockout Protection
- Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
- Low Power Consumption
Applications
- Wide VIN Multi-MHz Synchronous Buck Converters
- Class D Amplifiers for Audio
- 48-V Point-of-Load (POL) Converters for Telecom, Industrial, and Enterprise Computing
- High Power Density Single- and Three-Phase Motor Drive
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 12.659 | $ 12.66 |
| 10+ | $ 12.1056 | $ 121.06 |
| 30+ | $ 11.147 | $ 334.41 |
| 100+ | $ 10.3105 | $ 1031.05 |
Standard Packaging250/Full Reel | ||
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |



