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TI LMG5200MOFTRoHS

Manufacturer
MPN
LMG5200MOFT
LCSC Part #
C527479
Packaging
QFN-9(6x8)
Customer #
Key Attributes
LMG5200 80-V, 10-A GaN Half-Bridge Power Stage
Datasheetpdf iconTI LMG5200MOFT

Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Full Half-Bridge (H Bridge) Drivers
ManufacturerTI
PackagingQFN-9(6x8)
Driven ConfigurationHalf-Bridge
Load TypeMOSFET
Current - Output High(IOH)-
Input Logic Level - High1.87V~2.22V
Rise Time-
Fall Time-
Propagation Delay tpLH29.5ns;29.5ns
Current - Output Low(IOL)-
Operating Temperature-40℃~+125℃
FeaturesUnder Voltage Protection;Dead-time control;Built-in bootstrap diode
Quiescent Current80uA
Voltage - Supply4.75V~5.25V
Input Logic Level - Low1.48V~1.76V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging250
Sales UnitPiece

Introduction

AI Translation

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm× 8 mm × 2 mm lead-free package and can be easily mounted on PCBs. The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring highfrequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5 - 1.5 V).

Features

AI Translation
  • Integrated 15-mΩ GaN FETs and Driver
  • 80-V Continuous, 100-V Pulsed Voltage Rating
  • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
  • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
  • Ideal for Isolated and Non-Isolated Applications
  • Gate Driver Capable of Up to 10 MHz Switching
  • Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
  • Supply Rail Undervoltage Lockout Protection
  • Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
  • Low Power Consumption

Applications

AI Translation
  • Wide VIN Multi-MHz Synchronous Buck Converters
  • Class D Amplifiers for Audio
  • 48-V Point-of-Load (POL) Converters for Telecom, Industrial, and Enterprise Computing
  • High Power Density Single- and Three-Phase Motor Drive
In-Stock: 195
195 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 12.659$ 12.66
10+$ 12.1056$ 121.06
30+$ 11.147$ 334.41
100+$ 10.3105$ 1031.05
Standard Packaging250/Full Reel
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