- Pinout
- Footprint
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EDA ModelsEasyEDA
TI CSD23202W10
| Manufacturer | |
| MPN | CSD23202W10 |
| LCSC Part # | C527452 |
| Packaging | DSBGA-4 |
| Customer # | |
| Key Attributes | MOSFET P-CH 12V 2.2A DSBGA-4 |
| Datasheet |  TI CSD23202W10 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | DSBGA-4 | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 238pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 44mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 512pF | |
| Gate Charge(Qg) | 2.9nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
Features
AI Translation
- Ultra-Low Qg and Qgd
- Small Footprint 1 mm × 1 mm
- Low Profile 0.62-mm Height Pb Free
- Gate ESD Protection – 3 kV
- RoHS Compliant Halogen Free
Applications
AI Translation
- Battery Management
- Load Switch
- Battery Protection
In-Stock: 85
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1074 | $ 0.54 |
| 50+ | $ 0.1049 | $ 5.25 |
| 150+ | $ 0.1032 | $ 15.48 |
| 500+ | $ 0.1016 | $ 50.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | DSBGA-4 | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 238pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 44mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 512pF | |
| Gate Charge(Qg) | 2.9nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
Features
AI Translation
- Ultra-Low Qg and Qgd
- Small Footprint 1 mm × 1 mm
- Low Profile 0.62-mm Height Pb Free
- Gate ESD Protection – 3 kV
- RoHS Compliant Halogen Free
Applications
AI Translation
- Battery Management
- Load Switch
- Battery Protection
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |