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ST PD54003-E product image
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ST PD54003-ERoHS

Manufacturer
MPN
PD54003-E
LCSC Part #
C5269709
Packaging
PowerSO-10RF
Customer #
Key Attributes
25V 4A 2V 52.8W PowerSO-10RF RF FETs, MOSFETs RoHS
Datasheetpdf iconST PD54003-E
In-Stock: 5
5 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 21.3884$ 21.39
30+$ 20.3653$ 610.96
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs
ManufacturerST
PackagingPowerSO-10RF
Drain to Source Voltage25V
Current - Continuous Drain(Id)4A
ConfigurationCommon source
Gate Threshold Voltage (Vgs(th))2V
Operating Temperature-40℃~+165℃
Pd - Power Dissipation52.8W
Reverse Transfer Capacitance (Crss@Vds)4pF
Input Capacitance(Ciss)59pF

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This device is a common-source N-channel enhancement-mode lateral RF power FET designed for high-gain broadband commercial and industrial applications. It operates in common-source mode at 7 V up to 1 GHz. The device features excellent gain, linearity, and reliability of ST's latest LDMOS technology in the PowerSO-10RF package. Its outstanding linear performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true SMD plastic RF power package, based on the highly reliable PowerSO-10 — a high-power SMD package pioneered by ST and approved by JEDEC. It is specially optimized for RF requirements, offering excellent RF performance while being easy to assemble.

Features

AI Translation
  • Excellent thermal stability
  • Common-source configuration
  • Output power P<sub>OUT</sub> = 3 W, gain 12 dB at 500 MHz
  • New RF plastic package

Applications

AI Translation
  • Motor control and drive
  • Battery management
  • Uninterruptible Power Supply (UPS)