ST STB150NF55T4
| Manufacturer | |
| MPN | STB150NF55T4 |
| LCSC Part # | C5269568 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 55V 4V 300W 6mΩ 1 N-channel D2PAK Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | - | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| RDS(on) | 6mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.4nF | |
| Gate Charge(Qg) | 190nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This power MOSFET represents the latest achievement based on a unique "single feature size" stripe process. The resulting transistors feature extremely high packing density, enabling low on-resistance and excellent avalanche characteristics, while requiring fewer alignment steps, thus delivering superior manufacturing reproducibility.
Features
AI Translation
- Current limited by package
- 100% avalanche tested
Applications
AI Translation
- Switching applications
In-Stock: 45
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 4.4579 | $ 4.46 |
| 10+ | $ 4.3561 | $ 43.56 |
| 30+ | $ 4.2882 | $ 128.65 |
| 100+ | $ 4.2202 | $ 422.02 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | - | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| RDS(on) | 6mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.4nF | |
| Gate Charge(Qg) | 190nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This power MOSFET represents the latest achievement based on a unique "single feature size" stripe process. The resulting transistors feature extremely high packing density, enabling low on-resistance and excellent avalanche characteristics, while requiring fewer alignment steps, thus delivering superior manufacturing reproducibility.
Features
AI Translation
- Current limited by package
- 100% avalanche tested
Applications
AI Translation
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



