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ST STF9N60M2 product image
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ST STF9N60M2RoHS

Manufacturer
ST
MPN
STF9N60M2
LCSC Part #
C5268737
Packaging
TO-220FP
Customer #
Key Attributes
MOSFET 5.5A TO-220FP
Datasheetpdf iconST STF9N60M2
In-Stock: 40
40 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.4665$ 2.47
10+$ 2.0689$ 20.69
50+$ 1.8206$ 91.03
100+$ 1.5659$ 156.59
500+$ 1.4507$ 725.35
1,000+$ 1.4004$ 1400.40
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220FP
Drain to Source Voltage600V
Output Capacitance(Coss)18pF
Current - Continuous Drain(Id)5.5A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)680fF
RDS(on)780mΩ
Number1 N-channel
Input Capacitance(Ciss)320pF
Gate Charge(Qg)10nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features

AI Translation
  • Extremely low gate charge
  • Lower RDS(on) X area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications