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ST STW65N60DM6 product image
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ST STW65N60DM6RoHS

Manufacturer
ST
MPN
STW65N60DM6
LCSC Part #
C5268695
Packaging
TO-247
Customer #
Key Attributes
600V 46A 4.75V 368W 71mΩ@10V TO-247 Single FETs, MOSFETs RoHS
Datasheetpdf iconST STW65N60DM6

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-247
Drain to Source Voltage600V
Current - Continuous Drain(Id)46A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation368W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)71mΩ@10V
Input Capacitance(Ciss)2.5nF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Ωrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Features

AI Translation
  • Fast-recovery body diode
  • Lower RDS(on) per area vs previous generation
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

AI Translation
  • Switching applications
In-Stock: 25
25 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 9.983$ 9.98
10+$ 9.755$ 97.55
30+$ 9.603$ 288.09
90+$ 9.451$ 850.59
Standard Packaging30/Full Tube
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