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ST STP80N450K6RoHS

Manufacturer
ST
MPN
STP80N450K6
LCSC Part #
C5268656
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 800V 10A TO-220
Datasheetpdf iconST STP80N450K6
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QtyUnit Price(Reference Only)Total Amount
1+$ 4.3067$ 4.31
10+$ 3.7147$ 37.15
50+$ 3.3629$ 168.15
100+$ 3.0065$ 300.65
500+$ 2.8422$ 1421.10
1,000+$ 2.7694$ 2769.40
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage800V
Current - Continuous Drain(Id)10A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation100W
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)700pF
Gate Charge(Qg)17.3nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This ultra-high voltage N-channel power MOSFET is designed with the ultimate MDmesh K6 technology, built on 20 years of super-junction expertise. The result is best-in-class on-resistance per unit area and gate charge for applications demanding exceptional power density and high efficiency.

Features

AI Translation
  • Best-in-class on-resistance times area product
  • Best-in-class figure of merit (FOM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener protection

Applications

AI Translation
  • Flyback converter
  • Adapters for tablets, laptops, and all-in-one PCs
  • LED lighting