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ST STD6N90K5 product image
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ST STD6N90K5RoHS

Manufacturer
ST
MPN
STD6N90K5
LCSC Part #
C5268642
Packaging
DPAK
Customer #
Key Attributes
900V 6A 3V 110W 910mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS
Datasheetpdf iconST STD6N90K5
In-Stock: 36
36 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.4411$ 1.44
10+$ 1.4073$ 14.07
30+$ 1.3865$ 41.60
100+$ 1.364$ 136.40
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage900V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)910mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)342pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This ultra-high voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a significantly reduced on-resistance combined with ultra-low gate charge, making it ideal for applications with demanding power density and efficiency requirements.

Features

AI Translation
  • Industry-lowest on-resistance area product
  • Industry-best figure of merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener protection

Applications

AI Translation
  • Switching applications