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ST STGWA80H65DFBRoHS

Manufacturer
ST
MPN
STGWA80H65DFB
LCSC Part #
C5268579
Packaging
TO-247
Customer #
Key Attributes
Trench gate field-stop IGBT, HB series, 650 V, 80 A high speed
Datasheetpdf iconST STGWA80H65DFB

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingTO-247
Td(off)280ns
Pd - Power Dissipation469W
Td(on)84ns
Operating Temperature-55℃~+175℃
Current - Collector(Ic)120A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)215pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2V@80A,15V
Reverse Recovery Time(trr)85ns
Switching Energy(Eoff)1.5mJ
Turn-On Energy (Eon)2.1mJ
Input Capacitance(Cies)10.524nF
Output Capacitance(Coes)385pF
Gate Charge(Qg)414nC@15V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

AI Translation
  • Maximum junction temperature: TJ = 175 ℃ High speed switching series
  • Minimized tail current
  • VCE(sat) = 1.6 V (typ.) @ 80 A Tight parameter distribution Safe paralleling
  • Low thermal resistance Very fast soft recovery antiparallel diode

Applications

AI Translation
  • Photovoltaic inverters
  • High frequency converters
In-Stock: 634
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QtyUnit PriceTotal Amount
1+$ 3.0436$ 3.04
10+$ 2.5555$ 25.56
30+$ 2.2507$ 67.52
90+$ 1.9377$ 174.39
510+$ 1.7967$ 916.32
990+$ 1.735$ 1717.65
Standard Packaging30/Full Tube
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