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HXY MOSFET IRLML6402 product image
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HXY MOSFET IRLML6402RoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IRLML6402
LCSC Part #
C5261055
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 3.6A SOT-23
Datasheetpdf iconHXY MOSFET IRLML6402
In-Stock: 4,800
4,800 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0399$ 0.80
200+$ 0.0319$ 6.38
600+$ 0.0275$ 16.50
3,000+$ 0.0232$ 69.60
9,000+$ 0.0209$ 188.10
21,000+$ 0.0197$ 413.70
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOT-23
ConfigurationStandalone
Drain to Source Voltage20V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)48mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)740pF
Gate Charge(Qg)7.8nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The IRLML6402 uses advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation down to 2.5V gate voltage. The device is suitable for use as a load switch or in PWM applications.

Features

AI Translation
  • Drain-source voltage V<sub>DS</sub> = -20V, drain current I<sub>D</sub> = -3.6A
  • On-resistance R<sub>DS(ON)</sub> = 55mΩ at gate-source voltage V<sub>GS</sub> = -4.5V
  • On-resistance R<sub>DS(ON)</sub> = 75mΩ at gate-source voltage V<sub>GS</sub> = -2.5V

Applications

AI Translation
  • PWM applications - Load switching - Power management - P-channel MOSFET