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DIODES DMN3061SVT-7 product image
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DIODES DMN3061SVT-7RoHS

Manufacturer
DIODES
MPN
DMN3061SVT-7
LCSC Part #
C5248866
Packaging
TSOT-23-6
Customer #
Key Attributes
2.3A 28mΩ@10V 770mW 1.8V 1 N-channel TSOT-23-6 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN3061SVT-7
In-Stock: 50
50 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1255$ 0.63
50+$ 0.1227$ 6.14
150+$ 0.1208$ 18.12
500+$ 0.119$ 59.50
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingTSOT-23-6
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)45pF
Configuration-
Current - Continuous Drain(Id)2.3A
RDS(on)28mΩ@10V
Pd - Power Dissipation770mW
Gate Threshold Voltage (Vgs(th))1.8V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)31pF
Number1 N-channel
Input Capacitance(Ciss)233pF
Gate Charge(Qg)2.9nC
Vgs±20V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Low on-resistance
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage current
  • Fully lead-free and RoHS compliant
  • Halogen- and antimony-free, "Green" device

Applications

AI Translation
  • General-purpose interface switch — power management function