DIODES DMN2024UFDF-7
| Manufacturer | |
| MPN | DMN2024UFDF-7 |
| LCSC Part # | C5248840 |
| Packaging | UDFN2020-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 7.1A UDFN2020-6 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | UDFN2020-6 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 78pF | |
| Current - Continuous Drain(Id) | 7.1A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 960mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 647pF | |
| Gate Charge(Qg) | 14.8nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance RDS(ON) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- 0.6mm thickness — ideal for slim-form applications
- 4mm² PCB footprint
- Low gate threshold voltage
- Fast switching speed
- ESD-protected gate
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
Applications
AI Translation
- Battery management applications
- Power management functions
- DC-DC converters
In-Stock: 2,715
2,715 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1525 | $ 0.76 |
| 50+ | $ 0.1345 | $ 6.73 |
| 150+ | $ 0.1268 | $ 19.02 |
| 500+ | $ 0.1172 | $ 58.60 |
| 3,000+ | $ 0.1129 | $ 338.70 |
| 6,000+ | $ 0.1103 | $ 661.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | UDFN2020-6 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 78pF | |
| Current - Continuous Drain(Id) | 7.1A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 960mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 647pF | |
| Gate Charge(Qg) | 14.8nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance RDS(ON) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- 0.6mm thickness — ideal for slim-form applications
- 4mm² PCB footprint
- Low gate threshold voltage
- Fast switching speed
- ESD-protected gate
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
Applications
AI Translation
- Battery management applications
- Power management functions
- DC-DC converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



