DIODES 2N7002DWK-7
| Manufacturer | |
| MPN | 2N7002DWK-7 |
| LCSC Part # | C5248452 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | 2.4Ω@10V 540mW 1V 1 N-channel SOT-363 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 11pF | |
| Configuration | - | |
| Current - Continuous Drain(Id) | - | |
| RDS(on) | 2.4Ω@10V | |
| Pd - Power Dissipation | 540mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 22pF | |
| Gate Charge(Qg) | 223pC | |
| Vgs | ±20V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Dual N-channel MOSFET
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- ESD protection
- Fully lead-free and fully RoHS compliant
- Halogen and antimony free, "Green" device
Applications
AI Translation
- Motor control
- Power management functions
In-Stock: 100
100 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.2011 | $ 0.20 |
| 10+ | $ 0.1963 | $ 1.96 |
| 30+ | $ 0.193 | $ 5.79 |
| 100+ | $ 0.1898 | $ 18.98 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 11pF | |
| Configuration | - | |
| Current - Continuous Drain(Id) | - | |
| RDS(on) | 2.4Ω@10V | |
| Pd - Power Dissipation | 540mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 22pF | |
| Gate Charge(Qg) | 223pC | |
| Vgs | ±20V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Dual N-channel MOSFET
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- ESD protection
- Fully lead-free and fully RoHS compliant
- Halogen and antimony free, "Green" device
Applications
AI Translation
- Motor control
- Power management functions
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



