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GOODWORK SI2305 product image
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GOODWORK SI2305RoHS

Manufacturer
GOODWORKAsian Brands
MPN
SI2305
LCSC Part #
C5248046
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 4.1A SOT-23
Datasheetpdf iconGOODWORK SI2305
In-Stock: 87,120
87,120 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0349$ 0.70
200+$ 0.027$ 5.40
600+$ 0.0226$ 13.56
3,000+$ 0.0197$ 59.10
9,000+$ 0.0174$ 156.60
30,000+$ 0.0161$ 483.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerGOODWORK
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)132pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.31W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)33mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)830pF
Gate Charge(Qg)8.8nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

SI2305 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DSon</sub>) and gate charge for most synchronous buck converter applications. The SI2305 complies with RoHS and green product requirements and has passed full-function reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • Green/RoHS-compliant device available
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology
  • Drain-source voltage (VDSS): -20 V
  • Drain current (ID): -4.1 A
  • On-resistance (RDS(ON)): 33 mΩ