GOODWORK AO3416
| Manufacturer | GOODWORKAsian Brands |
| MPN | AO3416 |
| LCSC Part # | C5248038 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 6.5A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 103pF | |
| Current - Continuous Drain(Id) | 6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 900mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 16mΩ@1.8V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 545pF | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO3416 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. The AO3416 is RoHS compliant and meets green product requirements, and has passed full-function reliability qualification.
Features
AI Translation
- RoHS-compliant green device
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
- Drain-source voltage (V_DSS): 20 V
- Drain current (I_D): 6.0 A
- On-resistance (RDS(ON)): 16 mΩ
In-Stock: 5,650
5,650 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0446 | $ 0.45 |
| 100+ | $ 0.0354 | $ 3.54 |
| 300+ | $ 0.0308 | $ 9.24 |
| 3,000+ | $ 0.0262 | $ 78.60 |
| 6,000+ | $ 0.0235 | $ 141.00 |
| 9,000+ | $ 0.0221 | $ 198.90 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 103pF | |
| Current - Continuous Drain(Id) | 6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 900mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 16mΩ@1.8V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 545pF | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO3416 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. The AO3416 is RoHS compliant and meets green product requirements, and has passed full-function reliability qualification.
Features
AI Translation
- RoHS-compliant green device
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
- Drain-source voltage (V_DSS): 20 V
- Drain current (I_D): 6.0 A
- On-resistance (RDS(ON)): 16 mΩ
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



