DIODES ZXMP3A16N8TA
| Manufacturer | |
| MPN | ZXMP3A16N8TA |
| LCSC Part # | C5245492 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 6.7A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 1.9W | |
| Reverse Transfer Capacitance (Crss@Vds) | 229pF | |
| RDS(on) | 40mΩ | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.022nF | |
| Gate Charge(Qg) | 17.2nC@5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Features
AI Translation
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- Low profile SOIC package
Applications
AI Translation
- Disconnect switches
- Motor control
In-Stock: 386
386 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7146 | $ 0.71 |
| 10+ | $ 0.6402 | $ 6.40 |
| 30+ | $ 0.603 | $ 18.09 |
| 100+ | $ 0.5658 | $ 56.58 |
| 500+ | $ 0.5426 | $ 271.30 |
| 1,000+ | $ 0.5317 | $ 531.70 |
Standard Packaging500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 1.9W | |
| Reverse Transfer Capacitance (Crss@Vds) | 229pF | |
| RDS(on) | 40mΩ | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.022nF | |
| Gate Charge(Qg) | 17.2nC@5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Features
AI Translation
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- Low profile SOIC package
Applications
AI Translation
- Disconnect switches
- Motor control
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



