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DIODES DMP21D0UFB-7BRoHS

Manufacturer
DIODES
MPN
DMP21D0UFB-7B
LCSC Part #
C5245363
Packaging
X1-DFN1006-3
Customer #
Key Attributes
430mW 20V 770mA 700mV 495mΩ@4.5V 1 P-Channel P-Channel X1-DFN1006-3 Single FETs, MOSFETs RoHS
Datasheetpdf iconDIODES DMP21D0UFB-7B
In-Stock: 50
50 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.491$ 0.49
10+$ 0.4813$ 4.81
30+$ 0.4733$ 14.20
100+$ 0.4668$ 46.68
Standard Packaging10000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingX1-DFN1006-3
Output Capacitance(Coss)13.7pF
Pd - Power Dissipation430mW
Configuration-
Drain to Source Voltage20V
Current - Continuous Drain(Id)770mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
RDS(on)495mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)10.7pF
Number1 P-Channel
Input Capacitance(Ciss)76.5pF
Gate Charge(Qg)1.5nC@8V
Vgs±8V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging10000
Sales UnitPiece

Introduction

AI Translation

This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Footprint of only 0.6 mm² — 13x smaller than SOT23
  • Low gate threshold voltage
  • Fast switching speed
  • Fully lead-free and fully RoHS compliant
  • Halogen- and antimony-free, "green" device
  • Gate ESD protection
  • AEC-Q101 qualified, high reliability

Applications

AI Translation
  • Portable electronic devices