DIODES DMN3027LFG-7
| Manufacturer | |
| MPN | DMN3027LFG-7 |
| LCSC Part # | C5245312 |
| Packaging | PowerDI3333-8 |
| Customer # | |
| Key Attributes | 30V 5.3A 1.8V 1W 18.6mΩ 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 18.6mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 580pF | |
| Gate Charge(Qg) | 11.3nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low RDS(ON) — minimizes on-state losses
- Compact, thermally efficient package for higher-density end products
- Occupies only 33% of SO-8 package PCB footprint, enabling smaller end products
- 100% UIS (avalanche) rated tested
- 100% Rg tested
- Lead-free finish; RoHS compliant
- Halogen- and antimony-free. "Green" device
- AEC-Q101 qualified for high reliability
Applications
AI Translation
- Backlight illumination
- DC-DC converter
- Power management function
In-Stock: 15
15 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4265 | $ 0.43 |
| 10+ | $ 0.4167 | $ 4.17 |
| 30+ | $ 0.4102 | $ 12.31 |
| 100+ | $ 0.4037 | $ 40.37 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 18.6mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 580pF | |
| Gate Charge(Qg) | 11.3nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low RDS(ON) — minimizes on-state losses
- Compact, thermally efficient package for higher-density end products
- Occupies only 33% of SO-8 package PCB footprint, enabling smaller end products
- 100% UIS (avalanche) rated tested
- 100% Rg tested
- Lead-free finish; RoHS compliant
- Halogen- and antimony-free. "Green" device
- AEC-Q101 qualified for high reliability
Applications
AI Translation
- Backlight illumination
- DC-DC converter
- Power management function
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



