DIODES DMG1016UDWQ-7
| Manufacturer | |
| MPN | DMG1016UDWQ-7 |
| LCSC Part # | C5245247 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 20V 1036mA 845mA SOT-363 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1.036A;845mA | |
| RDS(on) | 450mΩ@4.5V;750mΩ@4.5V | |
| Pd - Power Dissipation | 330mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.36pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 59.76pF | |
| Gate Charge(Qg) | 622.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1.036A;845mA | |
| RDS(on) | 450mΩ@4.5V;750mΩ@4.5V | |
| Pd - Power Dissipation | 330mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.36pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 59.76pF | |
| Gate Charge(Qg) | 622.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Complementary pair MOSFET
- Ultra-compact surface mount package
- ESD protection
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
- Suitable for automotive applications requiring specific change control; this product is AEC-Q101 qualified, PPAP capable, and manufactured in an IATF 16949 certified facility
Applications
AI Translation
- Battery-powered systems and solid-state relay drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Power conversion circuits
In-Stock: 2,230
2,230 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1202 | $ 0.60 |
| 50+ | $ 0.106 | $ 5.30 |
| 150+ | $ 0.0999 | $ 14.99 |
| 500+ | $ 0.0923 | $ 46.15 |
| 2,500+ | $ 0.089 | $ 222.50 |
| 5,000+ | $ 0.0869 | $ 434.50 |
| 10,000+ | $ 0.0859 | $ 859.00 |
| 20,000+ | $ 0.0852 | $ 1704.00 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1.036A;845mA | |
| RDS(on) | 450mΩ@4.5V;750mΩ@4.5V | |
| Pd - Power Dissipation | 330mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.36pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 59.76pF | |
| Gate Charge(Qg) | 622.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1.036A;845mA | |
| RDS(on) | 450mΩ@4.5V;750mΩ@4.5V | |
| Pd - Power Dissipation | 330mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.36pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 59.76pF | |
| Gate Charge(Qg) | 622.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Complementary pair MOSFET
- Ultra-compact surface mount package
- ESD protection
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
- Suitable for automotive applications requiring specific change control; this product is AEC-Q101 qualified, PPAP capable, and manufactured in an IATF 16949 certified facility
Applications
AI Translation
- Battery-powered systems and solid-state relay drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Power conversion circuits
C5245247 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



