Winsok Semicon WSD4076DN56
| Manufacturer | Winsok SemiconAsian Brands |
| MPN | WSD4076DN56 |
| LCSC Part # | C5242072 |
| Packaging | DFN5x6-8L |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 76A DFN5x6-8L |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | DFN5x6-8L | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 185pF | |
| Current - Continuous Drain(Id) | 76A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 6.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 680pF | |
| Gate Charge(Qg) | 5.8nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | DFN5x6-8L | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 185pF | |
| Current - Continuous Drain(Id) | 76A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 6.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 680pF | |
| Gate Charge(Qg) | 5.8nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The WSD4076DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSD4076DN56 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Features
AI Translation
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- GreenDeviceAvailable
Applications
AI Translation
- High Frequency Point-of-Load Synchronous BuckConverter
- Networking DC-DC Power System
- Power Tool Application
In-Stock: 326
326 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4532$ 0.4079 | $ 0.41 |
| 10+ | $ 0.372$ 0.3348 | $ 3.35 |
| 30+ | $ 0.3363$ 0.3027 | $ 9.08 |
| 100+ | $ 0.2924$ 0.2632 | $ 26.32 |
| 500+ | $ 0.2323$ 0.2091 | $ 104.55 |
| 1,000+ | $ 0.221$ 0.1989 | $ 198.90 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | DFN5x6-8L | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 185pF | |
| Current - Continuous Drain(Id) | 76A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 6.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 680pF | |
| Gate Charge(Qg) | 5.8nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | DFN5x6-8L | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 185pF | |
| Current - Continuous Drain(Id) | 76A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 6.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 680pF | |
| Gate Charge(Qg) | 5.8nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The WSD4076DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSD4076DN56 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Features
AI Translation
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- GreenDeviceAvailable
Applications
AI Translation
- High Frequency Point-of-Load Synchronous BuckConverter
- Networking DC-DC Power System
- Power Tool Application
C5242072 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
