ST STP240N10F7
| Manufacturer | |
| MPN | STP240N10F7 |
| LCSC Part # | C5241016 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 110A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 110A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 217pF | |
| RDS(on) | 2.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.55nF | |
| Gate Charge(Qg) | 160nC@50V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel Power MOSFET utilizes the STripFETTM F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
AI Translation
- Ultra low on-resistance
- 100% avalanche tested
Applications
AI Translation
- High current switching applications
In-Stock: 160
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 4.4511 | $ 4.45 |
| 10+ | $ 3.7951 | $ 37.95 |
| 50+ | $ 3.2576 | $ 162.88 |
| 100+ | $ 2.863 | $ 286.30 |
| 500+ | $ 2.6811 | $ 1340.55 |
| 1,000+ | $ 2.5983 | $ 2598.30 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 110A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 217pF | |
| RDS(on) | 2.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.55nF | |
| Gate Charge(Qg) | 160nC@50V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel Power MOSFET utilizes the STripFETTM F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
AI Translation
- Ultra low on-resistance
- 100% avalanche tested
Applications
AI Translation
- High current switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



