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ElecSuper ESN21307 product image
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ElecSuper ESN21307RoHS

Manufacturer
ElecSuperAsian Brands
MPN
ESN21307
LCSC Part #
C5224307
Packaging
PDFN5x6-8L
Customer #
Key Attributes
MOSFET P-CH 30V 45A PDFN5x6-8L
Datasheetpdf iconElecSuper ESN21307
In-Stock: 8,513
8,513 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.2263$ 0.23
10+$ 0.1741$ 1.74
30+$ 0.1517$ 4.55
100+$ 0.1237$ 12.37
500+$ 0.1113$ 55.65
1,000+$ 0.1038$ 103.80
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN5x6-8L
Drain to Source Voltage30V
Output Capacitance(Coss)335pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)260pF
RDS(on)8.5mΩ@10V;12.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.98nF
Gate Charge(Qg)36nC@10V
TypeP-Channel
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Introduction

AI Translation

ESN21307 is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESN21307 is lead-free.

Features

AI Translation
  • -30V, RDS(ON) = 8.5mΩ (typ) at VGS = -10V
  • RDS(ON) = 12.5mΩ (typ) at VGS = -4.5V
  • Fast switching
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion