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ElecSuper BVSS138LT1G-ES product image
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ElecSuper BVSS138LT1G-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
BVSS138LT1G-ES
LCSC Part #
C5224273
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 400mA SOT-23
Datasheetpdf iconElecSuper BVSS138LT1G-ES
In-Stock: 3,740
3,740 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0125$ 0.25
200+$ 0.0098$ 1.96
600+$ 0.0082$ 4.92
3,000+$ 0.0073$ 21.90
9,000+$ 0.0065$ 58.50
21,000+$ 0.0061$ 128.10
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)9.7pF
Current - Continuous Drain(Id)400mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation417mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25pF
Gate Charge(Qg)650pC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BVSS138LT1G-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BVSS138LT1G-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.5 Ω (typical) @ VGS = 10 V
  • RDS(ON) = 1.6 Ω (typical) @ VGS = 4.5 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(on)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion