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ElecSuper BSS138LT1G-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSS138LT1G-ES
LCSC Part #
C5224261
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 400mA SOT-23
Datasheetpdf iconElecSuper BSS138LT1G-ES
In-Stock: 11,400
11,400 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0111$ 0.22
200+$ 0.009$ 1.80
600+$ 0.0078$ 4.68
3,000+$ 0.0071$ 21.30
9,000+$ 0.0065$ 58.50
21,000+$ 0.0062$ 130.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)9.7pF
Current - Continuous Drain(Id)400mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25pF
Gate Charge(Qg)650pC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BSS138LT1G-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS138LT1G-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.5 Ω (typical) @ VGS = 10 V
  • RDS(ON) = 1.6 Ω (typical) @ VGS = 4.5 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion