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ElecSuper 2N7002NXAKRRoHS

Manufacturer
ElecSuperAsian Brands
MPN
2N7002NXAKR
LCSC Part #
C5224254
Packaging
SOT-363
Customer #
Key Attributes
MOSFET N-CH ARR 60V 300mA SOT-363
Datasheetpdf iconElecSuper 2N7002NXAKR
In-Stock: 1,285
1,285 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0356$ 0.18
50+$ 0.0282$ 1.41
150+$ 0.024$ 3.60
500+$ 0.0215$ 10.75
3,000+$ 0.0176$ 52.80
6,000+$ 0.0165$ 99.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-363
Drain to Source Voltage60V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1.85Ω@10V;2.05Ω@4.5V
Number2 N-Channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

2N7002NXAKR is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product 2N7002NXAKR is a lead-free product.

Features

AI Translation
  • 60V, RDS(ON) = 1.85 Ω (typical) @ VGS = 10V
  • RDS(ON) = 2.05 Ω (typical) @ VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • ESD protection - Human Body Model (HBM): 2kV
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion