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ElecSuper 2N7002W-7-F-ES product image
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ElecSuper 2N7002W-7-F-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
2N7002W-7-F-ES
LCSC Part #
C5224240
Packaging
SOT-323
Customer #
Key Attributes
MOSFET N-CH 60V 300mA SOT-323
Datasheetpdf iconElecSuper 2N7002W-7-F-ES
In-Stock: 20,250
20,250 In stock, ships now
Minimum: 50Multiple: 50Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
50+$ 0.0224$ 1.12
500+$ 0.017$ 8.50
3,000+$ 0.0141$ 42.30
6,000+$ 0.0123$ 73.80
24,000+$ 0.0108$ 259.20
51,000+$ 0.0099$ 504.90
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-323
Drain to Source Voltage60V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1.85Ω@10V;2.05Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC@4.5V
TypeN-Channel
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Introduction

AI Translation

2N7002W-7-F-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product 2N7002W-7-F-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.85 Ω (typ.) @ VGS = 10 V
  • RDS(ON) = 2.05 Ω (typ.) @ VGS = 4.5 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • ESD protection - HBM: 2kV
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion