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ElecSuper RK7002BMT116-ES product image
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ElecSuper RK7002BMT116-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
RK7002BMT116-ES
LCSC Part #
C5224222
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 0.3A SOT-23
Datasheetpdf iconElecSuper RK7002BMT116-ES
In-Stock: 1,100
1,100 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0126$ 0.06
50+$ 0.0098$ 0.49
150+$ 0.0083$ 1.25
500+$ 0.0074$ 3.70
3,000+$ 0.0066$ 19.80
6,000+$ 0.0061$ 36.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1.85Ω@10V;2.05Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

RK7002BMT116-ES is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product RK7002BMT116-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.85Ω (typical), VGS = 10V
  • RDS(ON) = 2.05Ω (typical), VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • ESD protection - HBM: 2kV
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion