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ElecSuper ES2N7002LT1G product image
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ElecSuper ES2N7002LT1GRoHS

Manufacturer
ElecSuperAsian Brands
MPN
ES2N7002LT1G
LCSC Part #
C5224216
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 300mA SOT-23
Datasheetpdf iconElecSuper ES2N7002LT1G
In-Stock: 600
600 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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QtyUnit PriceTotal Amount
50+$ 0.0104$ 0.52
500+$ 0.0084$ 4.20
1,500+$ 0.0073$ 10.95
15,000+$ 0.0066$ 99.00
30,000+$ 0.0061$ 183.00
45,000+$ 0.0057$ 256.50
Standard Packaging3000/Full Reel

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1.85Ω@10V;2.05Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

ES2N7002LT1G is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ES2N7002LT1G is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.85 Ω (typical), VGS = 10 V
  • RDS(ON) = 2.05 Ω (typical), VGS = 4.5 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • ESD protection - HBM: 2kV
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion