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ElecSuper NDS7002A-ES product image
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ElecSuper NDS7002A-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
NDS7002A-ES
LCSC Part #
C5224210
Packaging
SOT23-3L
Customer #
Key Attributes
MOSFET N-CH 60V 0.38A SOT23-3L
Datasheetpdf iconElecSuper NDS7002A-ES
In-Stock: 4,340
4,340 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0138$ 0.28
200+$ 0.0118$ 2.36
600+$ 0.0107$ 6.42
3,000+$ 0.0101$ 30.30
9,000+$ 0.0095$ 85.50
21,000+$ 0.0092$ 193.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT23-3L
Drain to Source Voltage60V
Current - Continuous Drain(Id)380mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)2.06Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)45pF
Gate Charge(Qg)2nC@10V
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The NDS7002A-ES is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product NDS7002A-ES is Pb-free.

Features

AI Translation
  • 60V, RDS(ON)=1.75Ω(TYP.) @VGS=10V RDS(ON)=2.06Ω(TYP.) @VGS=4.5V
  • Use trench MOSFET technology
  • High density cell design for low RDS(on)
  • Material: Halogen free
  • Reliable and rugged
  • Avalanche Rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Power management in portable/desktop PCs
  • DC/DC conversion