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ElecSuper ESJ2301 product image
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ElecSuper ESJ2301RoHS

Manufacturer
ElecSuperAsian Brands
MPN
ESJ2301
LCSC Part #
C5224170
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 2.3A SOT-23
Datasheetpdf iconElecSuper ESJ2301
In-Stock: 18,420
18,420 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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Minimum: 20Multiple: 20Sales Unit: Piece
QtyUnit PriceTotal Amount
20+$ 0.0241$ 0.48
200+$ 0.0192$ 3.84
600+$ 0.0166$ 9.96
3,000+$ 0.0149$ 44.70
9,000+$ 0.0136$ 122.40
21,000+$ 0.0128$ 268.80
Standard Packaging3000/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)90mΩ@4.5V;110mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)405pF
Gate Charge(Qg)3.3nC@2.5V
TypeP-Channel
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Introduction

AI Translation

ESJ2301 is a P-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent on-resistance RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESJ2301 is lead-free.

Features

AI Translation
  • -20V, RDS(ON) = 90 mΩ (typical) at VGS = -4.5 V
  • RDS(ON) = 110 mΩ (typical) at VGS = -2.5 V
  • Fast switching
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion