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VISHAY IRFBG20PBFRoHS

Manufacturer
VISHAY
MPN
IRFBG20PBF
LCSC Part #
C5224098
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 1kV 0.86A TO-220AB
Datasheetpdf iconVISHAY IRFBG20PBF
In-Stock: 141
141 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.7444$ 1.74
10+$ 1.4669$ 14.67
50+$ 1.2397$ 61.99
100+$ 1.0613$ 106.13
500+$ 0.9817$ 490.85
1,000+$ 0.9477$ 947.70
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingTO-220AB
Drain to Source Voltage1kV
Current - Continuous Drain(Id)860mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)11Ω@10V
Number1 N-channel
Input Capacitance(Ciss)500pF
Gate Charge(Qg)38nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • RoHS Available
  • Ease of paralleling
  • Simple drive requirements