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GOODWORK MMBT3904LP product image
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GOODWORK MMBT3904LPRoHS

Manufacturer
GOODWORKAsian Brands
MPN
MMBT3904LP
LCSC Part #
C52204442
Packaging
DFN1006-3L
Customer #
Key Attributes
40V 300 1 NPN NPN 200mA DFN1006-3L Single Bipolar Transistors RoHS
Datasheetpdf iconGOODWORK MMBT3904LP
In-Stock: 9,400
9,400 In stock, ships now
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QtyUnit PriceTotal Amount
50+$ 0.0156$ 0.78
500+$ 0.0122$ 6.10
1,500+$ 0.0104$ 15.60
10,000+$ 0.0092$ 92.00
20,000+$ 0.0083$ 166.00
50,000+$ 0.0078$ 390.00
Standard Packaging10000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerGOODWORK
PackagingDFN1006-3L
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation400mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV
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Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging10000
Sales UnitPiece

Introduction

AI Translation

The MMBT3904LP combination of 60V/0.2A NPN low VCE(sat) Breakthrough In Small Signal (BISS) transistor. it is ideal for use in small power amplifiers and switch applications.

Features

AI Translation
  • Supper high density cell design
  • High collector current capability: IC = 0.2A
  • High energy efficiency due to less heat generation
  • High Power and current handing capability
  • Low VCE(sat): 0.3 V @ IC = 50 mA, IB = 5 mA

Applications

AI Translation
  • Charging circuits
  • Load Switching for portable device
  • Power management
  • PWM applications
  • Power switches (e.g. motors, fans)