VBsemi Elec BUK768R1-100E,118-VB

Manufacturer	VBsemi ElecAsian Brands
MPN	BUK768R1-100E,118-VB
LCSC Part #	C52190972
Packaging	TO-263
Customer #
Key Attributes	100V 140A 4V 375W 4mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS
Datasheet	VBsemi Elec BUK768R1-100E,118-VB

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	VBsemi Elec
Packaging	TO-263
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	140A
Output Capacitance(Coss)	750pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	375W
Reverse Transfer Capacitance (Crss@Vds)	280pF
RDS(on)	4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	5.5nF
Gate Charge(Qg)	110nC
Vgs	±20V
Type	N-Channel

In-Stock: 5

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Qty	Unit Price	Total Amount
1+	$ 1.0815$ 1.0275	$ 1.03
10+	$ 1.0574$ 1.0046	$ 10.05
50+	$ 1.0429$ 0.9908	$ 49.54
100+	$ 1.0269$ 0.9756	$ 97.56
Standard Packaging50/Full Tube

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	VBsemi Elec
Packaging	TO-263
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	140A
Output Capacitance(Coss)	750pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	375W
Reverse Transfer Capacitance (Crss@Vds)	280pF
RDS(on)	4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	5.5nF
Gate Charge(Qg)	110nC
Vgs	±20V
Type	N-Channel