TI UCC27611DRVR

The UCC27611 is a single-channel, high-speed gate driver optimized for 5V drive and specifically designed to address enhancement-mode GaNFETs. The drive voltage VREF is precisely regulated to 5V by an internal linear regulator. The UCC27611 provides asymmetric rail-to-rail peak current drive capability of 4A source and 6A sink. With a split-output configuration, turn-on and turn-off times can be optimized for the FET. The package and pin assignment with minimum parasitic inductance reduce rise and fall times and limit ringing. In addition, short propagation delays with minimal tolerance and variation enable efficient operation at high frequencies. 1Ω and 0.35Ω resistors improve immunity to hard switching caused by high slew rate dV/dt.

Independence from VDD input signal thresholds ensures TTL and CMOS low-voltage logic compatibility. For safety considerations, internal output pull-up and pull-down resistors hold the output low when the input pin is floating. Internal circuitry on the VREF pin features undervoltage lockout, which keeps the output low until the VREF supply voltage is within the operating range. The UCC27611 is offered in a compact 2.00mm × 2.00mm SON-6 package (DRV) with an exposed thermal pad and ground pad, enhancing package power handling capability. The UCC27611 operates over a wide temperature range of −40°C to 140°C.

• Enhancement-mode GaN FET (eGaN FET) driver
• 4V to 18V single-supply voltage range
• 5V drive voltage VREF
• 4A peak source and 6A peak sink current drive
• 1Ω and 0.35Ω pull-up and pull-down resistors (maximizes immunity to high dV/dt)
• Split output configuration (enables independent turn-on and turn-off optimization per FET)
• Low propagation delay (14ns typical)
• TTL and CMOS compatible inputs (supply voltage independent, easily interfaces with digital and analog controllers)
• Dual-input design for flexible drive (both inverting and non-inverting configurations supported)
• Output held low when input is floating
• VDD undervoltage lockout (UVLO)
• Optimized pin layout compatible with eGaN FETs for easy PCB routing
• 2.00mm × 2.00mm small outline no-lead (SON)-6 package with exposed thermal pad and ground pad (minimizes parasitic inductance to reduce gate ringing)
• Operating temperature range: −40°C to 140°C

• Switching power supplies
• DC-DC converters
• Synchronous rectification
• Solar inverters, motor control, UPS
• Envelope tracking power supplies