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TI UCC21750DWRRoHS

Manufacturer
TI
MPN
UCC21750DWR
LCSC Part #
C5216339
Packaging
SOIC-16-300mil
Customer #
Key Attributes
10A 33ns 27ns 10A SOIC-16-300mil Isolators - Gate Drivers RoHS
Datasheetpdf iconTI UCC21750DWR
In-Stock: 285
285 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 4.7927$ 4.79
10+$ 4.2549$ 42.55
30+$ 3.9804$ 119.41
100+$ 3.6116$ 361.16
500+$ 3.48$ 1740.00
1,000+$ 3.4231$ 3423.10
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryIsolators/Isolators - Gate Drivers
ManufacturerTI
PackagingSOIC-16-300mil
Driven ConfigurationLow Side;High Side
FeaturesSaturation fault detection;Miller clamp protection
Operating Temperature-40℃~+150℃
Input Logic Level - High2.1V~5.5V
Current - Output High(IOH)10A
Voltage - Supply3V~5.5V;13V~33V
Rise Time33ns
Fall Time27ns
CMTI(kV/us)150kV/us
Number of Channels1
Current - Output Low(IOL)10A
Quiescent Current2mA
Propagation Delay(tpd)90ns;90ns
Load TypeIGBT、SiC
Isolation Voltage(Vrms)5700V
Input Logic Level - Low0V~1.65V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

UCC21750 is a galvanically isolated single-channel gate driver designed for SiC MOSFETs and IGBTs operating at DC voltages up to 2121V, featuring advanced protection, excellent dynamic performance, and robustness. The UCC21750 offers peak source and sink currents of up to ±10A. The input side is isolated from the output side via SiO₂ capacitive isolation technology, supporting working voltages up to 1.5kVRMS, surge immunity of 12.8kVₚₖ, an isolation barrier lifetime of over 40 years, low device-to-device offset, and CMTI greater than 150V/ns. The UCC21750 includes advanced protection features such as fast overcurrent and short-circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input/output-side supply UVLO (for optimized SiC and IGBT switching behavior and robustness). An isolated analog-to-PWM sensor enables easier temperature or voltage sensing, further enhancing driver versatility while simplifying system design effort, size, and cost.

Features

AI Translation
  • 5.7kV RMS single-channel isolated gate driver for SiC MOSFET and IGBT up to 2121Vₚₖ
  • 33V maximum output drive voltage (VDD – VEE)
  • ±10A drive strength with split outputs
  • 150V/ns minimum CMTI
  • DESAT protection with 200ns fast response time
  • 4A internal active Miller clamp
  • 400mA soft turn-off during fault
  • Isolated analog sensor with PWM output
  • Temperature sensing using NTC, PTC, or thermistor diode
  • High-voltage DC link or phase voltage overcurrent alarm FLT and reset via RST/EN
  • Fast enable and disable response for RST/EN
  • <40ns noise transient and pulse rejection on input pins
  • 12V VDD UVLO on RDY (with power-good indication)
  • Input/output with up to 5V overshoot/undershoot transient voltage immunity
  • 130ns (max) propagation delay and 30ns (max) pulse/device-to-device skew
  • SOIC-16 DW package with creepage and clearance > 8mm
  • Operating junction temperature range: -40°C to +150°C
  • Safety-related certifications:
  • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
  • UL 1577 component recognition program

Applications

AI Translation
  • Industrial motor drives
  • Server, telecom, and industrial power supplies
  • Uninterruptible power supplies (UPS)
  • Photovoltaic inverters