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TI UCC21710DWR product image
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TI UCC21710DWRRoHS

Manufacturer
MPN
UCC21710DWR
LCSC Part #
C5216326
Packaging
SOIC-16-300mil
Customer #
Key Attributes
Source/Sink Reinforced Isolated Single Channel Gate Driver
Datasheetpdf iconTI UCC21710DWR

Products Specifications

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TypeDescription
CategoryIsolators/Isolators - Gate Drivers
ManufacturerTI
PackagingSOIC-16-300mil
FeaturesSaturation fault detection;Miller clamp protection
Driven Configuration-
Operating Temperature-40℃~+125℃
Current - Output High(IOH)10A
Rise Time33ns
Voltage - Supply3V~5.5V;13V~33V
Fall Time27ns
CMTI(kV/us)150kV/us
Number of Channels1
Current - Output Low(IOL)10A
Quiescent Current4mA
Propagation Delay(tpd)130ns;130ns
Load TypeIGBT;MOSFET

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current. The input side is isolated from the output side with SiO₂ capacitive isolation technology, supporting up to 1.5-KV RMS working voltage with longer than 40 years isolation barrier life, 12.8-kVₚₖ surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI). The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers' versatility and simplifying the system design effort, size and cost.

Features

AI Translation
  • 5.7-kVᵣₘₛ single channel isolated gate driver
  • Drives SiC MOSFETs and IGBTs up to 2121Vₚₖ
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off under fault condition
  • Isolated analog sensor with PWM output for temperature sensing with NTC, PTC or thermal diode and high voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transient and pulses on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance >8 mm
  • Operating junction temperature -40°C to 150°C

Applications

AI Translation
  • Industrial motor drives
  • Server, telecom, and industrial power supplies
  • Uninterruptible power supplies (UPS)
  • Solar inverters
  • Renewable energy storage converters
In-Stock: 22
22 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 7.9995$ 8.00
10+$ 6.8795$ 68.80
30+$ 6.1967$ 185.90
100+$ 5.6239$ 562.39
Standard Packaging2000/Full Reel
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