VBsemi Elec PMT280ENEAX-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | PMT280ENEAX-VB |
| LCSC Part # | C52148591 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | 3.3W 100V 4.5A 1.5V 110mΩ@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-223 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 3.3W | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free product as defined by IEC 61249-2-21
- Trench power MOSFET
- Maximum junction temperature 175 °C
- RoHS compliant with directive 2002/95/EC
In-Stock: 10
10 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4395$ 0.4176 | $ 0.42 |
| 10+ | $ 0.3418$ 0.3248 | $ 3.25 |
| 30+ | $ 0.3011$ 0.2861 | $ 8.58 |
| 100+ | $ 0.2491$ 0.2367 | $ 23.67 |
| 500+ | $ 0.2263$ 0.2150 | $ 107.50 |
| 1,000+ | $ 0.2116$ 0.2011 | $ 201.10 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-223 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 3.3W | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free product as defined by IEC 61249-2-21
- Trench power MOSFET
- Maximum junction temperature 175 °C
- RoHS compliant with directive 2002/95/EC
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



