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HXY MOSFET IPA65R190CFDXKSA2-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | IPA65R190CFDXKSA2-HXY |
| LCSC Part # | C52098408 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | 650V 20A 3.5V 52W 160mΩ@15V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS |
| Datasheet |  HXY MOSFET IPA65R190CFDXKSA2-HXY |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-220F | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 18pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 52W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| RDS(on) | 160mΩ@15V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 208pF | |
| Gate Charge(Qg) | 10.6nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- High-speed switching and low capacitance
- High blocking voltage and low on-resistance
- Easy to drive and parallel
- Effectively reduces junction temperature and thermal resistance, high EMI immunity
- RoHS compliant
Applications
AI Translation
- Power factor correction modules
- Switch-mode power supplies
- Power inverters
- High-voltage DC/DC converters
In-Stock: 50
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.2022$ 1.7618 | $ 1.76 |
| 10+ | $ 1.8649$ 1.4920 | $ 14.92 |
| 50+ | $ 1.6529$ 1.3224 | $ 66.12 |
| 100+ | $ 1.4344$ 1.1476 | $ 114.76 |
| 500+ | $ 1.3365$ 1.0692 | $ 534.60 |
| 1,000+ | $ 1.2947$ 1.0358 | $ 1035.80 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-220F | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 18pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 52W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| RDS(on) | 160mΩ@15V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 208pF | |
| Gate Charge(Qg) | 10.6nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- High-speed switching and low capacitance
- High blocking voltage and low on-resistance
- Easy to drive and parallel
- Effectively reduces junction temperature and thermal resistance, high EMI immunity
- RoHS compliant
Applications
AI Translation
- Power factor correction modules
- Switch-mode power supplies
- Power inverters
- High-voltage DC/DC converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |