HXY MOSFET R6511KND3TL1-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	R6511KND3TL1-HXY
LCSC Part #	C52098379
Packaging	TO-252-2L
Customer #
Key Attributes	650V 15A 3.5V 52W 180mΩ@18V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET R6511KND3TL1-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	15A
Output Capacitance(Coss)	20pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	3.5V
Pd - Power Dissipation	52W
RDS(on)	180mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)	0.9pF
Number	1 N-channel
Input Capacitance(Ciss)	180pF
Gate Charge(Qg)	11.2nC
Type	N-Channel

In-Stock: 24

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Qty	Unit Price	Total Amount
1+	$ 1.355$ 1.0840	$ 1.08
10+	$ 1.1265$ 0.9012	$ 9.01
30+	$ 1.0012$ 0.8010	$ 24.03
100+	$ 0.8584$ 0.6868	$ 68.68
500+	$ 0.7965$ 0.6372	$ 318.60
1,000+	$ 0.7679$ 0.6144	$ 614.40
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	15A
Output Capacitance(Coss)	20pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	3.5V
Pd - Power Dissipation	52W
RDS(on)	180mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)	0.9pF
Number	1 N-channel
Input Capacitance(Ciss)	180pF
Gate Charge(Qg)	11.2nC
Type	N-Channel