Infineon IRL1404ZPBF
| Manufacturer | |
| MPN | IRL1404ZPBF |
| LCSC Part # | C520676 |
| Packaging | TO-220F-3 |
| Customer # | |
| Key Attributes | MOSFET 40V 120A TO-220F-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220F-3 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 970pF | |
| Current - Continuous Drain(Id) | 120A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 230W | |
| Reverse Transfer Capacitance (Crss@Vds) | 570pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.08nF | |
| Gate Charge(Qg) | 75nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Logic Level
- Advanced Process Technology
- Ultra Low On-Resistance
- 175℃ Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9058 | $ 0.91 |
| 10+ | $ 0.8846 | $ 8.85 |
| 30+ | $ 0.87 | $ 26.10 |
| 100+ | $ 0.8537 | $ 85.37 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220F-3 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 970pF | |
| Current - Continuous Drain(Id) | 120A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 230W | |
| Reverse Transfer Capacitance (Crss@Vds) | 570pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.08nF | |
| Gate Charge(Qg) | 75nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Logic Level
- Advanced Process Technology
- Ultra Low On-Resistance
- 175℃ Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



