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Infineon IRFB5620PBFRoHS

Manufacturer
Infineon
MPN
IRFB5620PBF
LCSC Part #
C520672
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 200V 18A TO-220AB
Datasheetpdf iconInfineon IRFB5620PBF
In-Stock: 715
715 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.2495$ 1.25
10+$ 1.1278$ 11.28
50+$ 1.0613$ 53.07
100+$ 0.9866$ 98.66
500+$ 0.9525$ 476.25
1,000+$ 0.9379$ 937.90
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Configuration-
Drain to Source Voltage200V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation144W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.71nF
Gate Charge(Qg)25nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMl. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.

Features

AI Translation
  • Key Parameters Optimized for Class-D Audio Amplifier Applications
  • Low Rpson for Improved Efficiency
  • Low QG and QSW for Better THD and Improved Efficiency
  • Low QRR for Better THD and Lower EMI
  • 175°C Operating Junction Temperature for Ruggedness
  • Can Deliver up to 30oW per Channel into 8Q Load in Half-Bridge Configuration Amplifier