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Infineon IRLR2908TRPBFRoHS

Manufacturer
Infineon
MPN
IRLR2908TRPBF
LCSC Part #
C520624
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 80V 30A TO-252
Datasheetpdf iconInfineon IRLR2908TRPBF
In-Stock: 1,141
1,141 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.0733$ 1.07
10+$ 0.8765$ 8.77
30+$ 0.7789$ 23.37
100+$ 0.6814$ 68.14
500+$ 0.6228$ 311.40
1,000+$ 0.5919$ 591.90
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-252
Drain to Source Voltage80V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)22.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.89nF
Gate Charge(Qg)33nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low ReJC, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free