LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
ST STP15N65M5 product image
  • STP15N65M5 thumbnail 1
  • STP15N65M5 thumbnail 2
  • STP15N65M5 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

ST STP15N65M5RoHS

Manufacturer
ST
MPN
STP15N65M5
LCSC Part #
C5205155
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 650V 11A TO-220
Datasheetpdf iconST STP15N65M5
In-Stock: 946
946 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9928$ 0.99
10+$ 0.8354$ 8.35
50+$ 0.7559$ 37.80
100+$ 0.6781$ 67.81
500+$ 0.631$ 315.50
1,000+$ 0.6067$ 606.70
Standard Packaging50/Full Tube
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage650V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)2.6pF
RDS(on)308mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)816pF
Gate Charge(Qg)22nC@520V
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

AI Translation
  • Worldwide best RDS(on) * area
  • Higher VDSS rating and high dv/dt capability
  • Excellent switching performance
  • 100% avalanche tested

Applications

AI Translation
  • Switching applications