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HXY MOSFET NVMFS6B05NLT1G-HXY product image
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HXY MOSFET NVMFS6B05NLT1G-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
NVMFS6B05NLT1G-HXY
LCSC Part #
C51949360
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
107.8W 85V 100A 3V 4.3mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET NVMFS6B05NLT1G-HXY
In-Stock: 98
98 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9091$ 0.7273$ 0.73
10+$ 0.7378$ 0.5903$ 5.90
30+$ 0.6521$ 0.5217$ 15.65
100+$ 0.5664$ 0.4532$ 45.32
500+$ 0.5157$ 0.4126$ 206.30
1,000+$ 0.4887$ 0.3910$ 391.00
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(5x6)
Output Capacitance(Coss)673pF
Pd - Power Dissipation107.8W
Configuration-
Drain to Source Voltage85V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)4.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)41pF
Number1 N-channel
Input Capacitance(Ciss)4.645nF
Gate Charge(Qg)61.3nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

NVMFS6B05NLT1G utilizes advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.

Features

AI Translation
  • Drain-source voltage VDS = 85 V, drain current ID = 100 A
  • On-resistance RDS(ON) < 5.6 mΩ at gate-source voltage VGS = 10 V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC synchronous rectification applications