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HXY MOSFET FDMS86181E-HXY product image
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HXY MOSFET FDMS86181E-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
FDMS86181E-HXY
LCSC Part #
C51949346
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
176W 100V 120A 3V 3.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET FDMS86181E-HXY
In-Stock: 200
200 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.901$ 1.6159$ 1.62
10+$ 1.6184$ 1.3757$ 13.76
30+$ 1.4423$ 1.2260$ 36.78
100+$ 1.2614$ 1.0722$ 107.22
500+$ 1.1807$ 1.0036$ 501.80
1,000+$ 1.1452$ 0.9735$ 973.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(5x6)
Output Capacitance(Coss)592pF
Pd - Power Dissipation176W
ConfigurationStandalone
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)3.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)19.8pF
Number1 N-channel
Input Capacitance(Ciss)4.102nF
Gate Charge(Qg)69nC@10V
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

FDMS86181E employs advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.

Features

AI Translation
  • Drain-source voltage VDS = 100V, drain current ID = 120A
  • On-resistance RDS(ON) < 4.4mΩ at gate-source voltage VGS = 10V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC synchronous rectification applications