LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
20% OFF
HXY MOSFET IPD70N10S3-12-HXY product image
Images for reference only

HXY MOSFET IPD70N10S3-12-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPD70N10S3-12-HXY
LCSC Part #
C51949343
Packaging
TO-252-2L
Customer #
Key Attributes
100W 100V 70A 1.8V 8.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IPD70N10S3-12-HXY
In-Stock: 98
98 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6188$ 0.4951$ 0.50
10+$ 0.5014$ 0.4012$ 4.01
30+$ 0.4427$ 0.3542$ 10.63
100+$ 0.3856$ 0.3085$ 30.85
500+$ 0.3507$ 0.2806$ 140.30
1,000+$ 0.3332$ 0.2666$ 266.60
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
Output Capacitance(Coss)451pF
Pd - Power Dissipation100W
ConfigurationStandalone
Drain to Source Voltage100V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
RDS(on)8.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)12.9pF
Number1 N-channel
Input Capacitance(Ciss)1.368nF
Gate Charge(Qg)31.3nC@10V
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The IPD70N10S3-12 utilizes advanced SGT MOSFET technology to achieve low on-state resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability.

Features

AI Translation
  • Drain-source voltage VDS = 100 V, drain current ID = 70 A
  • On-resistance RDS(ON) < 17 mΩ at gate-source voltage VGS = 10 V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC power supplies
  • Synchronous rectification applications