HXY MOSFET DMN65D8L-7-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	11pF
Current - Continuous Drain(Id)	300mA
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.2V
Pd - Power Dissipation	350mW
Reverse Transfer Capacitance (Crss@Vds)	4.2pF
RDS(on)	1Ω@10V
Number	1 N-channel
Input Capacitance(Ciss)	21pF
Gate Charge(Qg)	1.7nC@4.5V
Type	N-Channel

In-Stock: 50

50 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
50+	$ 0.0199	$ 1.00
500+	$ 0.0156	$ 7.80
3,000+	$ 0.0133	$ 39.90
6,000+	$ 0.0118	$ 70.80
24,000+	$ 0.0106	$ 254.40
51,000+	$ 0.0099	$ 504.90
Standard Packaging3000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	11pF
Current - Continuous Drain(Id)	300mA
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.2V
Pd - Power Dissipation	350mW
Reverse Transfer Capacitance (Crss@Vds)	4.2pF
RDS(on)	1Ω@10V
Number	1 N-channel
Input Capacitance(Ciss)	21pF
Gate Charge(Qg)	1.7nC@4.5V
Type	N-Channel