HXY MOSFET RS1G120MNTB-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	RS1G120MNTB-HXY
LCSC Part #	C51949311
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	40V 40A 1.6V 11mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET RS1G120MNTB-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	171pF
Pd - Power Dissipation	-
Configuration	Standalone
Drain to Source Voltage	40V
Current - Continuous Drain(Id)	40A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	115pF
Number	1 N-channel
Input Capacitance(Ciss)	1.54nF
Gate Charge(Qg)	24nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 150

150 In stock, ships now

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Qty	Unit Price	Total Amount
5+	$ 0.2019$ 0.1919	$ 0.96
50+	$ 0.1975$ 0.1877	$ 9.39
150+	$ 0.1945$ 0.1848	$ 27.72
500+	$ 0.1915$ 0.1820	$ 91.00
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	171pF
Pd - Power Dissipation	-
Configuration	Standalone
Drain to Source Voltage	40V
Current - Continuous Drain(Id)	40A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	115pF
Number	1 N-channel
Input Capacitance(Ciss)	1.54nF
Gate Charge(Qg)	24nC@10V
Vgs	±20V
Type	N-Channel